Testing Services

MEMS Wafer-level Testing

As the market demand for MEMS sensors increases, it becomes increasingly important to assure rapid improvement in product quality through fast process feedback and to reduce production costs by removing defective chips before package integration. SITRI’s MEMS wafer-level testing service provides the latest in MEMS testing capabilities to inertial, acoustical, and pressure sensor devices.

SITRI’s STI3000 test system can measure the most important MEMS characteristics at the wafer level, including resonant frequency, quality factor, stiction, quadrature error, hysteresis, spring constant, f3dB frequency, capacitance and leakage. With the help of an 8” automatic probe station, SITRI’s wafer test system can handle 4”, 6” and 8” MEMS wafers.

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 MEMS Package-level Testing

SITRI’s comprehensive MEMS product final testing service includes test scheme formulation, program development, hardware design and batch test. SITRI’s test system can handle packages ranging from 1mm*1mm to 5mm*5mm in size.

 Measurable MEMS types:

  • Accelerometers
  • Gyroscopes
  • Magnetic sensors
  • Pressure sensors
  • Humidity sensors
  • Temperature sensors

 Measurable parameters:

  • Output voltage
  • Current power
  • Noise
  • Sensitivity
  • Zero position output
  • Linearity
  • Sensitivity temperature drift
  • Zero position temperature drift
  • Linearity temperature drift

MEMS Final Testing from SITRI   MEMS Testing Services from SITRI


Analog and Mixed Signal Testing

SITRI can also support final test for analog and mixed signal ICs. Our flexible test beds and high precision instrumentation makes SITRI’s test environment ideal for:

  • LED drivers
  • Power management ICs
  • Analog switches
  • Operational amplifiers
  • Lithium battery protection

Analog Signal Test Sample


Power Device Testing

SITRI’s power device test capabilities can test all the static and dynamic parameters of power devices. Test development is fast and straightforward, test results and graphs are shown in a real-time manner, and test specifications comply with the IEC-60747-9 standard.

Measurable power device types:

  • Single-chip MOSFET
  • Single-chip IGBT
  • Single-chip diode
  • IGBT module

 Measurable parameters:

  • Static parameters like grid opening voltage, saturation voltage drop, leak current, and forward voltage of freewheel diode
  • Dynamic parameters like single-pulse RBSOA (reverse biased safe operating area), di-pulse RBSOA, short circuit safe operating area, gate charge, opening time, closing time, and recovery charge of freewheel diode

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